Single crystal ReS? (Rhenium disulfide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropi

14 years of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals: Our large size (~1cm in size) vdW WS2 crystals are treated as gold standards

Hafnium disulfide (HfS?) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT)

More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals.

Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques.